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PE4606 - N and P Channel Enhancement Mode Power MOSFET

Download the PE4606 datasheet PDF. This datasheet also covers the PE4606-ChipSourceTek variant, as both devices belong to the same n and p channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The PE4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • N-Channel.
  • VDS = 30V, ID = 6.5A RDS(ON) < 30mΩ @ VGS=10V RDS(ON) < 42mΩ @ VGS=4.5V Schematic diagram.
  • P-Channel.
  • VDS = -30V, ID = -6A RDS(ON) < 33mΩ @ VGS=-10V RDS(ON) < 44mΩ @ VGS=-4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired k.
  • Surface Mount Package e.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PE4606-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE4606
Manufacturer ChipSourceTek
File Size 915.10 KB
Description N and P Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE4606 Datasheet

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Other Datasheets by ChipSourceTek

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N and P Channel Enhancement Mode Power MOSFET Description The PE4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE4606 General Features ● N-Channel ● VDS = 30V, ID = 6.5A RDS(ON) < 30mΩ @ VGS=10V RDS(ON) < 42mΩ @ VGS=4.5V Schematic diagram ● P-Channel ● VDS = -30V, ID = -6A RDS(ON) < 33mΩ @ VGS=-10V RDS(ON) < 44mΩ @ VGS=-4.