• Part: PE4606
  • Description: N and P Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: ChipSourceTek
  • Size: 915.10 KB
PE4606 Datasheet (PDF) Download
ChipSourceTek
PE4606

Description

The PE4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

Key Features

  • VDS = 30V, ID = 6.5A RDS(ON) < 30mΩ @ VGS=10V RDS(ON) < 42mΩ @ VGS=4.5V - P-Channel
  • High Power and current handing capability
  • Lead free product is acquired k
  • Surface Mount Package 科 e Application 特 T
  • PWM applications
  • C Maximum Power Dissipation Symbol VDS VGS ID IDM PD N-Channel 30 ±20 6.5 30 2 P-Channel
  • 30 ±20 -6 -30 2 Unit V V A A W Operating Junction and Storage Temperature Range TJ,TSTG
  • gFS VDS=10V,ID=5A - 15 - S Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note
  • 矽 u Diode Forward Current (Note