PE7165G - P-Channel Enhancement Mode Power MOSFET

ChipSourceTek

General Description

The PE7165G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS = -18V, ID = -65A RDS(ON) < 4mΩ @ VGS=-4.5V RDS(ON) < 5.6mΩ @ VGS=-2.5V Schematic diagram.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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PE7165G p-channel enhancement mode power mosfet by ChipSourceTek - Datasheet Preview

Datasheet Details

Part number	PE7165G
Manufacturer	ChipSourceTek
File Size	1.02 MB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	PE7165G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel Enhancement Mode Power MOSFET Description The PE7165G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE7165G General Features ● VDS = -18V, ID = -65A RDS(ON) < 4mΩ @ VGS=-4.5V RDS(ON) < 5.6mΩ @ VGS=-2.