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PE7290G - P-Channel Enhancement Mode Power MOSFET

Download the PE7290G datasheet PDF. This datasheet also covers the PE7290G-ChipSourceTek variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The PE7290G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = -20V, ID = -90A RDS(ON) < 2.3mΩ @ VGS=-10V RDS(ON) < 2.5mΩ @ VGS=-4.5V RDS(ON) < 3.7mΩ @ VGS=-2.5V Schematic diagram.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PE7290G-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE7290G
Manufacturer ChipSourceTek
File Size 0.98 MB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE7290G Datasheet

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Other Datasheets by ChipSourceTek

Part Number Description
PE7204A P-Channel Enhancement Mode Power MOSFET
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PE7165G P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
P-Channel Enhancement Mode Power MOSFET Description The PE7290G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE7290G General Features ● VDS = -20V, ID = -90A RDS(ON) < 2.3mΩ @ VGS=-10V RDS(ON) < 2.5mΩ @ VGS=-4.5V RDS(ON) < 3.7mΩ @ VGS=-2.