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PE8318M - N-Channel Enhancement Mode Power MOSFET

Download the PE8318M datasheet PDF. This datasheet also covers the PE8318M-ChipSourceTek variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The PE8318M uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 30V, ID = 18A RDS(ON) < 21mΩ @ VGS=10V RDS(ON) < 32mΩ @ VGS=4.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PE8318M-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE8318M
Manufacturer ChipSourceTek
File Size 733.93 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8318M Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PE8318M N-Channel Enhancement Mode Power MOSFET Description The PE8318M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 30V, ID = 18A RDS(ON) < 21mΩ @ VGS=10V RDS(ON) < 32mΩ @ VGS=4.5V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch k ● Power management Marking and pin assignment rceTe PDFN3.3x3.