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PE8330M - N-Channel Enhancement Mode Power MOSFET

General Description

The PE8330M uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 30V, ID = 30A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 18mΩ @ VGS=4.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number PE8330M
Manufacturer ChipSourceTek
File Size 798.19 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8330M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE8330M N-Channel Enhancement Mode Power MOSFET Description The PE8330M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 30V, ID = 30A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 18mΩ @ VGS=4.5V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch Marking and pin assignment rceTek PDFN3.3x3.3-8L u Absolute Maximum Ratings (TC=25℃ unless otherwise noted) o Parameter Drain-Source Voltage S Gate-Source Voltage Drain Current-Continuous (TC=25℃) ip Drain Current-Continuous (TC=100℃) Pulsed Drain Current (Note 1) h Maximum Power Dissipation (TC=25℃) C Avalanche Energy (L=0.