ChipSourceTek PE8350G
The PE8350G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.| Part No. | PE8350G |
|---|---|
| Datasheet | PE8350G Download |
| Manufacturer |  ChipSourceTek |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications. PE8350GGENERAL FEATURES
● VDS = 30V, ID = 50A RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 8.2mΩ @ VGS=4.5V Schematic diagram● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Application 技
● Battery management
● Motor controller and driver k
● PWM applications 科 e
● Load switch Marking and pin assignment 矽源特ourceT
ABSOLUTE MAXIMUM RATINGS
(TC=25℃ unless otherwise noted) S Drain-Source Voltage Parameter ip Gate-Source Voltage Drain Current-Continuous h Drain Current-Continuous (TC=100℃) C Pulsed Drain Current (Note 1) Symbol VDS VGS ID ID IDM DFN5x6-8L Rating 30 ±20 50 36 120 Unit V V A A A Maximum Power Dissipation PD 48 W Avalanche Current IAS 47 A Avalanche Energy (L=0.1mH) EAS 110 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance, Junction-to-Case (Note 2) RθJC 2.6 ℃/W TEL: +86-0755-27595155 27595165 Page 1 FAX: +86-0...
