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PE8350G - N-Channel Power MOSFET

General Description

The PE8350G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 30V, ID = 50A RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 8.2mΩ @ VGS=4.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number PE8350G
Manufacturer ChipSourceTek
File Size 1.04 MB
Description N-Channel Power MOSFET
Datasheet download datasheet PE8350G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power MOSFET Description The PE8350G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE8350G General Features ● VDS = 30V, ID = 50A RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 8.2mΩ @ VGS=4.