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PE8370G - N-Channel Enhancement Mode Power MOSFET

Download the PE8370G datasheet PDF (PE8370G-ChipSourceTek included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel enhancement mode power mosfet.

Description

The PE8370G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 30V, ID = 70A RDS(ON) < 3.9mΩ @ VGS=10V RDS(ON) < 5.5mΩ @ VGS=4.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PE8370G-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE8370G
Manufacturer ChipSourceTek
File Size 721.79 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8370G Datasheet

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Full PDF Text Transcription

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PE8370G N-Channel Enhancement Mode Power MOSFET Description The PE8370G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 30V, ID = 70A RDS(ON) < 3.9mΩ @ VGS=10V RDS(ON) < 5.5mΩ @ VGS=4.
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