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PE8390G - N-Channel Enhancement Mode Power MOSFET

Download the PE8390G datasheet PDF. This datasheet also covers the PE8390G-ChipSourceTek variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The PE8390G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 30V, ID = 90A RDS(ON) < 2.4mΩ @ VGS=10V RDS(ON) < 3mΩ @ VGS=4.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PE8390G-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE8390G
Manufacturer ChipSourceTek
File Size 697.46 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8390G Datasheet

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Other Datasheets by ChipSourceTek

Part Number Description
PE8306H N-Channel Enhancement Mode Power MOSFET
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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET Description The PE8390G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE8390G General Features ● VDS = 30V, ID = 90A RDS(ON) < 2.4mΩ @ VGS=10V RDS(ON) < 3mΩ @ VGS=4.
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