• Part: PE8460K
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: ChipSourceTek
  • Size: 787.92 KB
Download PE8460K Datasheet PDF
ChipSourceTek
PE8460K
Description The PE8460K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS = 40V, ID = 60A RDS(ON) < 9mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=4.5V Schematic diagram - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application - PWM applications 技 - Load switch k - Power management Marking and pin assignment 源特科rce Te TO-252-2L 矽 ou Absolute Maximum Ratings (TC=25℃ unless otherwise noted) S Drain-Source Voltage Parameter ip Gate-Source Voltage Drain Current-Continuous h Drain Current-Continuous (TC=100℃) C Pulsed Drain Current (Note 1) Symbol VDS VGS ID ID(TC=100℃) IDM Rating 40 ±20 60 42 200 Unit V V A A A Maximum Power Dissipation Avalanche Energy (L=1m H) 200 m J Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ Thermal Characteristic Thermal Resistance, Junction-to-Case...