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CB6318 - Wide Instantaneous Bandwidth High-Efficiency Power Amplifier

Datasheet Summary

Description

CB6318 is a highly efficient, wide instantaneous bandwidth, fully input/output matched power amplifier (PA) with high gain and linearity.

The compact 5x5 mm PA is designed for FDD and TDD 4G LTE and 5G systems operating from 3300 to 3600 MHz.

Features

  • Wide instantaneous signal bandwidth: 100 MHz C.
  • High efficiency: PAE = 22%~23% @ +28 dBm.
  • High gain: 36 dB.
  • Excellent input and output return loss: to 50Ω R system.
  • Integrated active bias: performance E compensated over temp.
  • Integrated enable On/Off function: PAEN = 1.7 to T 3 V.
  • Single supply voltage: 5.0 V T.
  • Pin-to-pin compatible PA family supporting major 3GPP bands E.
  • Compact (16-pin, 5 x 5 x 1.1 mm) package CHIPB(MSL3, 260℃ per JEDEC J-STD-020.

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Datasheet Details

Part number CB6318
Manufacturer Chipbetter
File Size 1.24 MB
Description Wide Instantaneous Bandwidth High-Efficiency Power Amplifier
Datasheet download datasheet CB6318 Datasheet
Additional preview pages of the CB6318 datasheet.

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    PRELIMINARY CB6318 3300 to 3600 MHz Wide Instantaneous Bandwidth High-Efficiency Power Amplifier DESCRIPTION CB6318 is a highly efficient, wide instantaneous bandwidth, fully input/output matched power amplifier (PA) with high gain and linearity. The compact 5x5 mm PA is designed for FDD and TDD 4G LTE and 5G systems operating from 3300 to 3600 MHz. L The active biasing circuitry is integrated to compensate PA performance over temperature, voltage, and process variation. IA A block diagram of the CB6318 is shown in Figure 1. The device package and pin out are shown in Figure 2. BLOCK DIAGRAM T VCC1 VCC2 VCC3 EN RFIN Input Match Stage 1 Stage 2 Stage 3 Output Match RFOUT ID Bias Circuits F PAEN Vbias N Figure 1.
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