CLT435
CLT435 is NPN Silicon Phototransistor manufactured by Clairex Technologies.
features absolute maximum ratings (TA = 25°C unless otherwise stated) storage temperature -65°C to +150°C
- ±9° acceptance angle operating temperature -65°C to +125°C
- custom aspheric lensed TO-18 lead soldering temperature(1) 260°C package collector-emitter voltage 30V
- transistor base is not bonded 50m A
- tested and characterized at 660nm continuous collector current continuous power dissipation(2) 250m W
- Ro HS pliant description
The CLT435 is a silicon NPN phototransistor mounted in a TO-18 package which features a custom double convex glass-to-metal sealed aspheric lens. Narrow acceptance angle enables excellent on-axis coupling. The CLT435 is mechanically and spectrally matched to Clairex's CLE435 LED. For additional information, call Clairex. notes: 1. 0.06” (1.5mm) from the header for 5 seconds maximum 2. Derate linearly 2.0m W/°C from 25°C free air temperature to TA = +125°C. electrical characteristics (TA = 25°C unless otherwise noted) symbol parameter min typ max units test conditions
IL ICEO V(BR)CEO tr, tf θHP notes:
Light current(3) Collector dark current Collector-emitter breakdown Output rise and fall time Total angle at half sensitivity points
0.5 30
- 1.0 5.0 18
- m A n A V µs deg.
VCE = 5V, Ee = 0.5m W/cm2 VCE = 10V, Ee = 0 IC = 100µA IC = 1m A, VCE=5V, RL=1kΩ.
3. Radiation source is a gallium arsenide phosphide LED operating at a peak emission wavelength of 660nm.
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
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