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IXDD604 - 4-Ampere Dual Low-Side Ultrafast MOSFET

Download the IXDD604 datasheet PDF. This datasheet also covers the IXD604 variant, as both devices belong to the same 4-ampere dual low-side ultrafast mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The IXDD604/IXDF604/IXDI604/IXDN604 dual high-speed gate drivers are especially well suited for driving the latest IXYS MOSFETs and IGBTs.

Each of the two outputs can source and sink 4A of peak current while producing voltage rise and fall times of less than 10ns.

Key Features

  • 4A Peak Source/Sink Drive Current.
  • Wide Operating Voltage Range: 4.5V to 35V.
  • -40°C to +125°C Extended Operating Temperature Range.
  • Logic Input Withstands Negative Swing of up to 5V.
  • Matched Rise and Fall Times.
  • Low Propagation Delay Time.
  • Low, 10μA Supply Current.
  • Low Output Impedance IXD_604.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXD604_Clare.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IXDD604
Manufacturer Clare
File Size 1.52 MB
Description 4-Ampere Dual Low-Side Ultrafast MOSFET
Datasheet download datasheet IXDD604 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers Features • 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V • Matched Rise and Fall Times • Low Propagation Delay Time • Low, 10μA Supply Current • Low Output Impedance IXD_604 Description The IXDD604/IXDF604/IXDI604/IXDN604 dual high-speed gate drivers are especially well suited for driving the latest IXYS MOSFETs and IGBTs. Each of the two outputs can source and sink 4A of peak current while producing voltage rise and fall times of less than 10ns. The input of each driver is virtually immune to latch up, and proprietary circuitry eliminates cross conduction and current “shoot-through.