UGT15.0 Datasheet | Clare

DESCRIPTION CP Clare’s UNI-IMP high-speed transient surge protectors (0.55-20k V) provide the ultimate protection from highenergy, fast-rising transients such as Nuclear EMP. These devices are constructed using a proprietary semiconductor junction process that results in nanosecond response times bined with peak current ratings in excess of 20k A. A unique benefit of this technology is that the breakdown voltage is virtually independent of the rise time of the transient. In addition, the low capacitance of these devices allows for direct placement on highfrequency lines and antenna feeds without excessive loading. FEATURES s Fast impulse breakdown (≤120% of typical DC APPLICATIONS s s s s s breakdown to 200k V/µs) s Tight DC breakdown voltage tolerance (± 10%) s Non-radioactive s Low capacitance Antenna feedlines Test equipment Video displays Medical electronics Instrumentation circuits STANDARD VOLTAGES Series UBD DC Breakdown Voltage (typ) 550 600 650 750 850 1.0 1.2 1.5 2.0 2.5 3.0 4.0 4.0 5.0 6.0 7.5 10.0 12.0 15.0 20.0 V V V V V k V k V k V k V k V k V k V k V k V k V k V k V k V k V k V Unit UBT and UGT (See detailed specifications for more information.) .cpclare. HIGH-SPEED TRANSIENT SURGE PROTECTORS UNI-IMPS SPECIFICATIONS All characteristics at 25˚C UBD-550 CONDITIONS 100V/s 5k V/µs 100V 1MHz 3k A (PW=15µs) UBD-600 540 1010 420 UBD-650 585 1010 500 PARAMETER Device Specifications DC Breakdown Impulse Breakdown Insulation Resistance Capacitance SYMBOL MIN TYP V BD Vbd IR C 495 1010 330 550 - MAX 605 660 20.0 - TYP - MAX 660 720 20.0 - TYP - MAX UNITS 715 780 20.0 V V Ω p F surges Life Ratings Surge...