Datasheet Summary
CMD5N50/CMU5N50
General Description
These N-Channel enhancement mode power field effect transistors are produced using advanced technology which has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.
Product Summery
BVDSS 500V
RDSON 1.5
July 2011
ID 4.5A
Features
TO252 / TO251 Pin Configuration
Low gate charge (typical 27 nC) Low Crss ( typical 17 pF) Fast switching 100%avalanche tested Improved dv/dt...