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CMN2309 - P-Channel Enhancement Mode Field Effect Transistor

General Description

This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications.

Key Features

  • RDS(ON).

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Datasheet Details

Part number CMN2309
Manufacturer Cmos
File Size 768.65 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CMN2309 Datasheet

Full PDF Text Transcription for CMN2309 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CMN2309. For precise diagrams, and layout, please refer to the original PDF.

CMN2309 P-Channel Enhancement Mode Field Effect Transistor General Description This MOSFET utilizes a unique structure that combines the benefits of low on-resistance wit...

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a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications. Features RDS(ON)<250mΩ @ VGS=-10V RDS(ON)<300mΩ @ VGS=-4.5V Fast switching speed Surface mount package Absolute Maximum Ratings Product Summery BVDSS -60V RDSON 250m ID -1.

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