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CMN3100 - N-Channel Enhancement Mode Field Effect Transistor

General Description

The CMN3100 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • RDS(ON).

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Datasheet Details

Part number CMN3100
Manufacturer Cmos
File Size 837.80 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CMN3100 Datasheet

Full PDF Text Transcription for CMN3100 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CMN3100. For precise diagrams, and layout, please refer to the original PDF.

CMN3100 N-Channel Enhancement Mode Field Effect Transistor General Description The CMN3100 uses advanced trench technology to provide excellent RDS(ON), low gate charge a...

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nced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features RDS(ON)<14mΩ @ VGS=10V RDS(ON)<16mΩ @ VGS=4.

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