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CMU5N50 - N-Channel Transistor

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using advanced technology which has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • TO252 / TO251 Pin Configuration Low gate charge (typical 27 nC) Low Crss ( typical 17 pF) Fast switching 100%avalanche tested Improved dv/dt capability D G S TO252 G D S TO251 (CMD5N50) (CMU5N50) Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avala.

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Datasheet preview – CMU5N50

Datasheet Details

Part number CMU5N50
Manufacturer Cmos
File Size 1.37 MB
Description N-Channel Transistor
Datasheet download datasheet CMU5N50 Datasheet
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Full PDF Text Transcription

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CMD5N50/CMU5N50 General Description These N-Channel enhancement mode power field effect transistors are produced using advanced technology which has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. Product Summery BVDSS 500V RDSON 1.5 July 2011 ID 4.
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