RHD5910 Datasheet | Cobham Semiconductor

FEATURES  Single power supply operation at 3.3V or 5.0V  Radiation performance - Total dose: - ELDRS Immune - SEL Immune - Neutron Displacement Damage > 1 Mrad(Si); Dose rate = 50-300 rad(Si)/s > 100 Me V-cm2/mg > 1014 neutrons/cm2  Short Circuit Tolerant  Full military temperature range  Designed for aerospace and high reliability space applications  Packaging - Hermetic ceramic SOIC - 16-pin, .417"L x .300"W x .120"Ht - Weight - 0.8 grams max  Radiation Hardness Assurance Plan: DLA Certified to MIL-PRF-38534, Appendix G. GENERAL DESCRIPTION The RHD5910 is a radiation hardened, single supply, high speed, quad parator in a 16-pin SOIC package. The RHD5910 design uses specific circuit topology and layout methods to mitigate total ionizing dose effects and single event latchup. These characteristics make the RHD5910 especially suited for the harsh environment encountered in Deep Space missions. It is guaranteed operational from -55°C to +125°C. Available screened in accordance with MIL-PRF-38534 Class K, the RHD5910 is ideal for demanding military and space applications. ORGANIZATION AND APPLICATION The RHD5910 quad parator is intended for operation with dynamic signals on either or both inputs. parison is ’continuous’, that is, the circuit functions as high gain open loop amplifiers with a digital output. For slow input signals with small input differences the parators can be expected to respond to small noise signals at the inputs. Feedback hysteresis is the responsibility of the user to avoid ’chattering’ on system noise. The parator will accept signals anywhere in the included power supply range. The circuit delay is specified for a half-volt single ended or differential input step of either polarity ending in an input polarity reversal of 10m V. See Switching Diagrams. CMOS device drive has a negative temperature coefficient and the devices are therefore inherently tolerant to momentary shorts, although on chip thermal shutdown is not...