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Document 512
SMT Gate Drive Transformers
• Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits.
• Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and
DA2320-AL, isolation between secondaries is 500 Vdc.
Core material Ferrite Terminations RoHS compliant tin-silver over tin over nickel over phos bronze. Other terminations available at additional cost. Weight 535 – 615 mg Ambient temperature –40°C to +125°C Storage temperature Component: –40°C to +125°C.
DA2317-AL Datasheet
