BTC4505N3 Datasheet | Comchip Technology

Features High breakdown voltage. (BVceo =400V) Low saturation voltage, typically Vce(sat) =0.1V at Ic/Ib=10m A/1m A C CHIP .chiptech. COLLECTOR 3 1 BASE SOT-23 .119 (3.0) .110 (2.8) EMITTER .020 (0.5) Top View .056 (1.40) .047 (1.20) .006 (0.15) .002 (0.05) .037(0.95) .037(0.95) .006 (0.15)max. .020 (0.5) .020 (0.5) .103 (2.6) .086 (2.2) Dimensions in inches (millimeters) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limit 400 400 6 300 0.225 150 -55~+150 MDS0405003A Page 1 .044 (1.10) .035 (0.90) Unit V V V m A W °C °C High Voltage Transistor (NPN) Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICER IEBO - VCE(sat) - VBE(sat) h FE f T Cob Min. 400 400 6 52 Typ. 0.1 20 7 Max. 10 20 10 0.5 1.5 270 Unit V V V µA n A µA V V MHz p F CHIP .chiptech. Test Conditions IC=50µA, IE=0 IC=1m A, IB=0 IE=50µA, IC=0 VCB=400V, IE=0 VCE=300V, REB=4kӨ VEB=6V,IC=0 IC=10m A, IB=1m A IC=10m A, IB=1m A VCE=10V, IC=10m A VCE=10V, IC=10m A, f=10MHz VCB=10V, f=1MHz - Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of h...