• Part: CDBA320LL
  • Description: SMD Schottky Barrier Rectifier
  • Manufacturer: Comchip Technology
  • Size: 148.61 KB
Download CDBA320LL Datasheet PDF
Comchip Technology
CDBA320LL
CDBA320LL is SMD Schottky Barrier Rectifier manufactured by Comchip Technology.
Features DO-214AC (SMA) Ideal for surface mount applications Easy pick and place Built-in strain relief Super low forward voltage drop 0.067(1.70) 0.051(1.29) 0.180(4.57) 0.160(4.06) 0.110(2.79) 0.086(2.18) Mechanical data Case: Molded plastic Epoxy: UL 94V-0 rate flame retardant Metallurgically bonded construction Polarity: Color band denotes cathode end Mounting position: Any Weight: 0.063 grams 0.091(2.31) 0.067(1.70) 0.059(1.50) 0.035(0.89) 0.012(0.31) 0.006(0.15) 0.209(5.31) 0.185(4.70) 0.008(0.20) 0.004(0.10) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characterics TYPE NUMBER Maximum Recurrent Peak Revers e Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current, 8.3 ms single half sinewave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage at 3.0A Maximum DC Reverse Current at Rated DC Blocking Voltage Operating Temperature Range T J Storage Temperature Range T STG T a = 25°C Ta = 80°C 0.42 0.38 1.5 60 -25 to +80 -50 to +125 CDBA320L CDBA320LL CDBA340L CDBA340LL 20 20 40 40 14 14 28 28 20 20 40 40 3.0 90 0.45 0.4 UNITS V V V A A V m A °C °C Rating 25 C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Note 1: Thermal resistance from junction to ambient and junction to to lead P.C.B. Mounted on 0.2 x 0.2 copper pad areas MDS020 9 00 2 A Page 1 SMD Schottky Barrier Rectifier CHIP .chip..tw Rating and Characteristic Curves (CDBA320L Thru CDBA340LL) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) FIG.2-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 3.0 2.4 1.8 1.2 0.6 3 BA CD PEAK FORWARD SURGE CURRENT,(A) Tj=25°C 8.3ms Single Half Sine Wave JEDEC method 20 L~ B CD 4 A3 0L...