CDBAF5819-G Datasheet | Comchip Technology

Features For surface mounted applications. Metal to silicon rectifier,majority carrier conduction. Plastic package has Underwriters Lab, flamability classification94V-0. High surge capacity. High current capability, low forward voltage. 0.020(R0.50) 0.091(2.30) 0.083(2.10) 0.002(0.05) 0.181(4.60) 0.173(4.40) Mechanical data Case: Packed with FRP substrate and epoxy underfilled. Terminals: Solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band . Weight: 0.02 gram(approx.). Dimensions in inches and (millimeter) 0.045(1.15) 0.029(0.75) 0.045(1.15) 0.029(0.75) 0.046(1.16) 0.034(0.86) Maximum Ratings (at T A =25 C unless otherwise noted) Parameter Max. Repetitive Peak Reverse Voltage Max. DC Bolcking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave suprimposed on rate load (JEDEC method) Max. Average Forward Current Typ ica l The rmal Res ist an ce (Not e 3) St or ag e Temper at ur e Max. Oper at ing Ju nc tion Temper at ur e Symbol CDBAF5817-G CDBAF5818-G CDBAF5819-G Unit V RRM V DC V RMS 20 20 14 30 30 21 40 40 28 V V V I FSM IO R 1 80 -50 to +1 25 +1 25 A C/ W T STG Tj Electrical Characteristics (at T A =25 C unless otherwise noted) Parameter Max. Forward Voltage at 1.0 A (Note 1) at 3.0 A (Note 1) Max. DC Reverse Current at Rated DC Blocking Voltage Tj = 25 C Tj = 100 C Symbol CDBAF5817-G CDBAF5818-G CDBAF5819-G Unit VF 0.45 0.75 0.550 0.875 0.5 10 110 0.60 0.90 V IR m A Typical Junction Capacitance (Note 2) Cj p F Notes: (1) Pulse test width PW = 300usec, 1% duty cycle. (2) Measured at 1.0 Mhz and applied reverse voltage of 4.0 Volts. (3) Thermal Resistance Junction to...