CDBB5100-G
CDBB5100-G is SMD Schottky Barrier Rectifiers manufactured by Comchip Technology.
Features
-Batch process design, excellent powe dissipation offers better reverse leakage current and thermal resistance. -Low profile surface mounted application in order to optimize board space. -Low power loss, high efficiency. -High current capability, low forward voltage dorp. -High surge capability. -Guardring for overvoltage protection. -Ultra high-speed switching. -Silicon epitaxial planar chip, metal silicon junction. -Lead-free parts meet environmental standards of MIL-STD-19500 /228
SMB-1
0.213(5.4) 0.197(5.0)
0.016(0.4) Typ.
0.142(3.6) 0.126(3.2)
0.168(4.2) 0.150(3.8)
Mechanical data
-Case: Molded plastic, JEDEC SMB. -Terminals: Solde plated, solderable per MIL-STD-750, method 2026. -Polarity: Indicated by cathode band. -Mounting position: Any -Weight:0.09 gram(approx.).
0.075(1.9) 0.067(1.7) 0.040(1.0) Typ. 0.040(1.0) Typ.
Dimensions in inches and (millimeter)
Maximum Ratings(at TA=25°C unless otherwise noted)
Parameter
Repetitive peak reverse voltage Maximum RMS voltage Continuous reverse voltage Maximum forward voltage @IF=1.0A Forward rectified current Forward surge current, 8.3ms half sine wave superimposed on rated load (JEDEC method) Reverse current on VR=VRRM @TA=25°C @TA=125°C Typ. thermal resistance, junction to ambient air Typ. diode junction capacitance (Note 1) Operating junction temperature Storage temperature
Note 1: f=1MHz and applied 4V DC reverse voltage.
Symbol
VRRM VRMS VR VF IO IFSM IR RθJA CJ TJ TSTG
CDBB540-G 40 28 40 0.55
CDBB560-G 60 42 60 0.75 5.0 150 0.5 50 12 380
CDBB5100-G 100 70 100 0.85
Unit
V V V V A A m A
°C/W p F
-55 to +150
-55 to +125 -65 to +175
°C °C
..net
REV:A QW-BB028 Page 1 chip Technology CO., LTD.
SMD Schottky Barrier Rectifiers
SMD Diodes...
