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CDBD8100-G - Chip Schottky Barrier Rectifier

This page provides the datasheet information for the CDBD8100-G, a member of the CDBD8060-G Chip Schottky Barrier Rectifier family.

Datasheet Summary

Features

  • -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. TO-263/D2PAK -Low profile surface mounted.

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Datasheet preview – CDBD8100-G

Datasheet Details

Part number CDBD8100-G
Manufacturer Comchip Technology
File Size 69.93 KB
Description Chip Schottky Barrier Rectifier
Datasheet download datasheet CDBD8100-G Datasheet
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Full PDF Text Transcription

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Chip Schottky Barrier Rectifier Comchip SMD Diode Specialist CDBD8060-G Thru. CDBD8100-G Reverse Voltage: 60 to 100 Volts Forward Current: 8.0 Amp RoHS Device Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. TO-263/D2PAK -Low profile surface mounted application in order to optimize board space. 0.059(1.50) 0.031(0.80) 0.413(10.50) 0.394(10.00) 0.185(4.70) 0.169(4.30) 0.055(1.40) 0.047(1.20) -Low power loss, high efficiency. -High current capability, low forward voltage drop. -High surge capability. -Guardring for overvoltage protection. -Ultra high-speed switching. -Silicon epitaxial planar chip, metal silicon junction. -Lead-free parts meet environmental standards of MIL-STD-19500 /228 4 0.370(9.40) 0.
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