CDBF0130 Datasheet | Comchip Technology

Features (Lead-free Device) Designed for mounting on small surface. Extremely thin/leadless package. Low drop-down voltage. Majority carrier conduction. 0.051(1.30) 0.043(1.10) 1005(2512) 0.102(2.60) 0.095(2.40) Mechanical data Case: 1005 (2512) Standard package , molded plastic. 0.014(0.35) Typ. 0.035 (0.90) 0.027 (0.70) Terminals: Gold plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band. 0.012 (0.30) Typ. Mounting position: Any. 0.014(0.35) Typ. Weight: 0.006 gram (approximately). Dimensions in inches and (millimeter) Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current , surge peak Power Dissipation Storage temperature Junction temperature 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) Conditions Symbol Min Typ Max Unit V RRM VR Io I FSM PD T STG Tj -40 -40 1000 250 +125 +125 35 30 100 V V m A m A m W C C Electrical Characteristics ( at T A = 25 C unless otherwise noted ) Parameter Forward voltage Reverse current Capacitance between terminals V R = 30 V f = 1MHz, and 10 VDC reverse voltage Conditions I F = 100 m A DC Symbol Min Typ Max Unit VF IR CT 9 0.44 30 V u A p F RDS0212003-B Page 1 SMD Schottky Barrier Diode CHIP .chip..tw RATING AND CHARACTERISTIC CURVES (CDBF0130) Fig. 1 - Forward characteristics 1000 10m 1m Fig. 2 - Reverse characteristics 125...