CDBFN180-G
CDBFN180-G is SMD Schottky Barrier Rectifiers manufactured by Comchip Technology.
- Part of the CDBFN1100-G comparator family.
- Part of the CDBFN1100-G comparator family.
SMD Schottky Barrier Rectifiers
SMD Diodes Specialist
CDBFN120-G Thru CDBFN1100-G
Voltage: 20 to 100 Volts Current: 1.0 Amp Ro HS Device
Features
- Batch process design, excellent powe dissipation offers better reverse leakage current . -Low profile surface mounted application in order to optimize board space. -Low power loss, high efficiency. -High current capability, low forward voltage dorp. -High surge capability. -Guardring for overvoltage protection. -Very iny plastic SMD package. -Ultra high-speed switching. -Silicon epitaxial planarchip, metal silicon junction. -Lead-free parts meet environmental standards of MIL-STD-19500 /228
SOD-323
0.106 (2.70) 0.091 (2.3)
0.012(0.3) Typ.
0.057 (1.45) 0.041 (1.05)
0.047 (1.2) 0.031 (0.8)
Mechanical data
-Case: JEDEC SOD-323, Molded plastic -Terminals: Solde plated, solderable per MIL-STD-750, method 2026. -Polarity: Indicated by cathode band. -Mounting position: Any -Weight:0.008 gram(approx.). Maximum Ratings(at TA=25 OC
Parameter
Repetitive peak reverse voltage Maximum RMS voltage Continuous reverse voltage Maximum forward voltage @IF=1.0A Forward rectified current Forward surge current, 8.3ms half sine wave superimposed on rated load (JEDEC method) Reverse current on VR=VRRM @TA=25 C @TA=125 C Typ. thermal resistance, junction to ambient air Typ. diode junction capacitance (Note 1) Operating junction temperature Storage temperature
Note 1: f=1MHz and applied 4V DC reverse voltage.
0.016(0.4) Typ.
0.016(0.4) Typ.
Dimensions in inches and (millimeter) unless otherwise noted)
120-G 20 14 20 130-G 30 21 30
Symbol CDBFN CDBFN CDBFN CDBFN CDBFN CDBFN CDBFN Unit
140-G 40 28 40 150-G 50 35 50
160-G 60 42 60
180-G 80 56 80
1100-G 100 70 100
VRRM VRMS VR VF IO IFSM
V V V V A A
1.0 30 0.5 10 90 120
-55 to +125 -65 to +150 -55 to +150
IR RθJA CJ TJ TSTG m A C/W p...
