CDBN0230 Datasheet | Comchip Technology

Features Designed for mounting on small surface Extremely thin package Low stored charge Majority carrier conduction 0.126(3.20) 0.118(3.00) 0.020(0.50) Typ. 1206 (3216) Mechanical data Case: 1206(3216) Standard package, molded plastic. Terminals: Solder plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band. Mounting position: Any. Weight: 0.0085 gram. (approximately) 0.010(R0.25) Typ. 0.063(1.60) 0.055(1.40) 0.043 (1.10) 0.035(0.90) Dimensions in inches and (millimeter) Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current , surge peak Power Dissipation Storage temperature Junction temperature 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) Conditions Symbol Min Typ Max Unit V RRM VR Io I FSM PD T STG Tj -40 -40 3000 250 +125 +125 35 30 200 V V m A m A m W C C Electrical Characteristics ( at T A = 25 C unless otherwise noted ) Parameter Forward voltage Reverse current Capacitance between terminals V R = 30 V f = 1MHz, and 10 VDC reverse voltage Conditions I F = 200 m A DC Symbol Min Typ Max Unit VF IR CT 10 0.50 30 V u A p F RDS0208014-C Page 1 SMD Schottky Barrier Diode CHIP .chip..tw RATING AND CHARACTERISTIC CURVES (CDBN0230) Fig. 1 - Forward characteristics 1000 1m Fig. 2 - Reverse characteristics Reverse current ( A ) Forward current (m A ) 125 C 100u 75...