Comchip Technology CDBU70
SMD Schottky Barrier Diode
FEATURES
Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. 0.039(1.00) 0.031(0.80) 0.071(1.80) 0.063(1.60) 0603(1608) Mechanical data Case: 0603(1608) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.003 gram(approx.). 0.028(0.70) Typ. 0.012 (0.30) Typ. 0.014(0.35) Typ. 0.033(0.85) 0.027(0.70) Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Peak reverse voltage Reverse voltage RMS reverse voltage Average forward rectified current Forward current,surge peak Power dissipation Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit V RM VR V R(RMS) IO 70 70 49 70 0.1 150 -65 +125 +125 V V V mA A mW O 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) I FSM PD T STG Tj C C OELECTRICAL CHARACTERISTICS
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