Comchip Technology CDBUR0230L
SMD Schottky Barrier Diode
FEATURES
Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. 0.039(1.00) 0.031(0.80) Mechanical data 0.033(0.85) Case: 0603(1608) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.003 gram(approx.). 0.028(0.70) Typ. 0.027(0.70) 0.018(0.45) Typ. Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current,surge peak Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit V RRM VR IO 35 30 200 V V mA 8.3ms single half sine-wave superimposed on rate load(JEDEC method) I FSM T STG Tj -40 1 +125 +125 A O C C OELECTRICAL CHARACTERISTICS
(at T A =25 C unless otherwise noted) O Parameter Forward voltage Reverse current I F = 200 mA V R = 10 V Conditions Symb...