1N5817-G
Key Features
- Metal-Semiconductor junction with guard ring
- Epitaxial construction
- Low forward voltage drop
- High current capability
- For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
- 0.028(0.70) 0.205(5.20) 0.165(4.20) 1.000(25.40) Min
- 0.080(2.00) Dimensions in inches and (millimeter)
