Comchip 2SA1213-G
General Purpose Transistor
| Part No. | 2SA1213-G |
|---|---|
| Datasheet | 2SA1213-G Download |
| Manufacturer |  Comchip |
| Description | General Purpose Transistor |
| Buy | Stock & Price |
FEATURES
-Small flat package. -Power amplifier and switching -applications. -Low saturation voltage. -High speed switching time.MAXIMUM RATINGS
(at TA=25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base voltage VCBO -50 V Collector-Emitter voltage VCEO -50 V Emitter-Base voltage VEBO -5 V Continuous current IC -2 A Collector power dissipation PC 500 mW Thermal resistance from junction to ambient RθJA 250 °C/W Junction temperature Storage temperature TJ 150 °C Tstg -55~+150 °C 1 : Base 2 : Collector 3 : Emitter SOT-89-3L 0.181(4.60) 0.173(4.40) 0.061(1.55) REF. 0.102(2.60) 0.091(2.30) 123 0.167(4.25) 0.155(3.94) 0.020(0.52) 0.013(0.32) 0.060(1.50) TYP. 0.023(0.58) 0.016(0.40) 0.118(3.00) TYP. 0.063(1.60) 0.055(1.40) 0.047(1.20) 0.035(0.90) 0.017(0.44) 0.014(0.35) Dimensions in inches and (millimeter)ELECTRICAL CHARACTERISTICS
(at TA=25°C unless otherwise noted) Parameter Conditions Symbol Collector-base breakdown voltage IC =-0.1mA , IE=0 V(BR)CBO Collector-emitter...
