ATV66SM830CA-G Datasheet | Comchip

Features -Glass passivated chip. -6600W peak pulse power capability with a 10/1000µs waveform, repetitive rate (duty cycle):0.01% -Meets ISO7637-2 5a surge specification. -Low leakage current. -Bi-directional unit. -Excellent clamping capability. -Very fast response time. -Ro HS pliant. -ply with AEC-Q101 Mechanical Data -Case: DO-218AB -Epoxy: UL 94V-0 rate flame retardant. DO-218AB 0.630(16.00) 0.591(15.00) 0.539(13.70) 0.524(13.30) 0.339(8.60) 0.323(8.20) 0.114(2.90) 0.091(2.30) 0.413(10.50) 0.374(9.50) 0.406(10.30) 0.382(9.70) 0.366(9.30) 0.343(8.70) 0.205(5.20) 0.189(4.80) 0.028(0.70) 0.020(0.50) 0.138(3.50) 0.098(2.50) 0.106(2.70) 0.067(1.70) Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Parameter Symbol Value Peak power dissipation with a 10/1000μs waveform (Note 1) Peak power dissipation with a 10/10,000μs waveform 6600 3650 Peak pulse current with a 10/1000μs IPP waveform (Note 1) Power dissipation on infinite heatsink at TL=25°C See Next Table 8.0 Operation junction temperature range -55 to +175 Storage temperature range TSTG Note: 1. Non-repetitive current pulse per Fig.2 and derated above TA=25°C per Fig.1 -55 to +175 Units W W A W °C °C pany reserves the right to improve product design , functions and reliability without notice. REV: A AQW-BTV10 chip Technology CO.,...