The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Small Signal Transistor
BC856AW-G Thru. BC858CW-G (PNP)
RoHS Device
Features
-Ideally suited for automatic insertion
-For Switching and AF Amplifier Applications
-Power dissipation PCM: 0.15W (@TA=25°C)
-Collector current ICM: -0.1A
-Collector-base voltage VCBO: BC856W= -80V BC857W= -50V BC858W= -30V
-Operating and storage junction temperature range: TJ, TSTG= -65 to +150°C
SOT-323
0.053(1.35) 0.045(1.15)
0.039 (1.00) 0.035 (0.90)
0.087 (2.20) 0.079 (2.00)
3
12
0.055 (1.40) 0.047 (1.20)
0.006 (0.15) 0.003 (0.08)
0.096 (2.45) 0.085 (2.15)
Mechanical data
-Case: SOT-323, molded plastic.
-Terminals: solderable per MIL-STD-750, method 2026.
0.016 (0.40) 0.008 (0.20)
0.004 (0.10) max
0.018 (0.46) 0.010 (0.26)
Circuit diagram
-1.BASE -2.EMITTER -3.
BC856AW-G Datasheet
