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CDBD20200-G - (CDBD2020-G - CDBD20200-G) Chip Schottky Barrier Rectifier

Download the CDBD20200-G datasheet PDF. This datasheet also covers the CDBD2020-G variant, as both devices belong to the same (cdbd2020-g - cdbd20200-g) chip schottky barrier rectifier family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • -Batch process design, excellent power dissipation offers better reverse leakage optimize board space. current and thermal resistance. 0.046(1.20) 0.032(0.80) 0.402(10.20) 0.386(9.80) 0.185(4.70) 0.169(4.30) 0.055(1.40) 0.047(1.20) D2PAK -Low profile surface mounted.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CDBD2020-G_Comchip.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CDBD20200-G
Manufacturer Comchip
File Size 111.97 KB
Description (CDBD2020-G - CDBD20200-G) Chip Schottky Barrier Rectifier
Datasheet download datasheet CDBD20200-G Datasheet

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Other Datasheets by Comchip

Part Number Description
CDBD20200-HF (CDBD2020-HF - CDBD20200-HF) Chip Schottky Barrier Rectifier
CDBD2020-G (CDBD2020-G - CDBD20200-G) Chip Schottky Barrier Rectifier
CDBD2020-HF (CDBD2020-HF - CDBD20200-HF) Chip Schottky Barrier Rectifier
CDBD20100-G (CDBD2020-G - CDBD20200-G) Chip Schottky Barrier Rectifier
CDBD20100-HF (CDBD2020-HF - CDBD20200-HF) Chip Schottky Barrier Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Chip Schottky Barrier Rectifier CDBD2020-G Thru. CDBD20200-G Reverse Voltage: 20 to 200 Volts Forward Current: 20.0 Amp RoHS Device Features -Batch process design, excellent power dissipation offers better reverse leakage optimize board space. current and thermal resistance. 0.046(1.20) 0.032(0.80) 0.402(10.20) 0.386(9.80) 0.185(4.70) 0.169(4.30) 0.055(1.40) 0.047(1.20) D2PAK -Low profile surface mounted application in order to -Low power loss, high efficiency. -High current capability, low forward voltage drop. -High surge capability. -Guardring for overvoltage protection. -Ultra high-speed switching. -Silicon epitaxial planar chip, metal silicon junction. -Lead-free parts meet environmental standards of MIL-STD-19500 /228 2 0.370(9.40) 0.354(9.00) 0.012(0.30) 0.004(0.10) 0.024(0.