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CDBDSC51200-G - Silicon Carbide Power Schottky Diode

Key Features

  • - Rated to 1200V at 5 Amps - Zero reverse recovery current - Zero forward recovery voltage - Temperature independent switching behaviour. - High temperature operation. - High frequency operation. Mechanical data - Case: TO-252/D-PAK, molded plastic. - Terminals: Solderable per MIL-STD-750, method 2026. 0.268(6.80) 0.248(6.30) 0.217(5.50) 0.201(5.10) 4 0.098(2.50) 0.083(2.10) 0.024(0.60) 0.016(0.40) 0.244(6.20) 0.213(5.40) 123 0.126(3.20) 0.094(2.40) 0.039(1.00) 0.020(0.50) 0.187(4.74) 0.1.

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Datasheet Details

Part number CDBDSC51200-G
Manufacturer Comchip
File Size 112.89 KB
Description Silicon Carbide Power Schottky Diode
Datasheet download datasheet CDBDSC51200-G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Carbide Power Schottky Diode CDBDSC51200-G Reverse Voltage: 1200 V Forward Current: 5 A RoHS Device D-PAK(TO-252) Features - Rated to 1200V at 5 Amps - Zero reverse recovery current - Zero forward recovery voltage - Temperature independent switching behaviour. - High temperature operation. - High frequency operation. Mechanical data - Case: TO-252/D-PAK, molded plastic. - Terminals: Solderable per MIL-STD-750, method 2026. 0.268(6.80) 0.248(6.30) 0.217(5.50) 0.201(5.10) 4 0.098(2.50) 0.083(2.10) 0.024(0.60) 0.016(0.40) 0.244(6.20) 0.213(5.40) 123 0.126(3.20) 0.094(2.40) 0.039(1.00) 0.020(0.50) 0.187(4.74) 0.171(4.34) 0.090(2.29) 0.016(0.40) 0.024(0.60) 0.016(0.