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CDBDSC8650-G - Silicon Carbide Power Schottky Diode

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Comchip

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CDBDSC8650-G Silicon Carbide Power Schottky Diode by Comchip - Datasheet Preview — Datasheet preview – CDBDSC8650-G

Datasheet Details

Part number	CDBDSC8650-G
Manufacturer	Comchip
File Size	86.30 KB
Description	Silicon Carbide Power Schottky Diode
Datasheet	CDBDSC8650-G Datasheet
Additional preview pages of the CDBDSC8650-G datasheet.

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Features

- Rated to 650V at 8 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF Circuit Diagram C(3) 0.409(10.40) 0.394(10.00) 0.244(6.20) 0.236(6.00) D-PAK(TO-252) 0.264(6.70) 0.256(6.50) 0.215(5.46) 0.201(5.10) 3 Φ 0.051(1.30) 0.043(1.10) 12 0.023(0.58) 0.018(0.46) 0.012(0.30) Max. 0.091(2.32) 0.089(2.28) 0.093(2.37) 0.085(2.16) 0.034(0.86).

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Published: Aug 13, 2019 |