CDBQR0130R
CDBQR0130R is SMD Schottky Barrier Diode manufactured by Comchip.
Features
Low reverse current . Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction.
0.026(0.65) 0.022(0.55)
Mechanical data
0.022(0.55)
Case: 0402(1005) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: cathode band & BQ Mounting position: Any Weight: 0.001 gram(approx.).
0.018(0.45)
0.012(0.30) Typ.
0.020(0.50) Typ.
Dimensions in inches and (millimeter) http://..net/
Maximum Rating (at T A =25 C unless otherwise noted)
Parameter
Repetitive peak reverse voltage Reverse voltage Average forward current Forward current,surge peak Storage temperature Junction temperature
Conditions
Symbol Min Typ Max Unit
V RRM VR IO 35 30 100 V V m A
8.3ms single half sine-wave superimposed on rate load(JEDEC method)
I FSM T STG Tj -40
1 +125 +125
Electrical Characteristics (at T A =25 C unless otherwise noted)
Parameter
Forward voltage Reverse current I F = 10 m A V R = 10 V
Conditions
Symbol Min Typ Max Unit
VF IR 0.45 0.5 V u A
REV:B
QW-A1127
Page 1 chip Technology CO., LTD. datasheet pdf
- http://..net/
SMD Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBQR0130R)
Fig. 1
- Forward characteristics
1000 1m
125...
