CDBQR0140R Datasheet | Comchip

Features Low reverse current. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. 0.026(0.65) 0.022(0.55) 0402(1005) 0.041(1.05) 0.037(0.95) Mechanical data Case: 0402(1005) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking Code: Cathode band & B9 Mounting position: Any. Weight: 0.001 gram(approx.). 0.020(0.50) Typ. 0.012(0.30) Typ. 0.022(0.55) 0.018(0.45) Dimensions in inches and (millimeter) http://..net/ Maximum Rating (at T A =25 C unless otherwise noted) Parameter Repetitive Peak reverse voltage Reverse voltage Average forward rectified current Forward current,surge peak Power Dissipation Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit V RRM VR IO 45 40 100 1 125 -40 +125 +125 V V m A A m W 8.3 ms single half sine-wave superimposed on rate load (JEDEC method) I FSM PD T STG Tj Electrical Characteristics (at T A =25 C unless otherwise noted) Parameter Forward voltage Reverse current Capacitance between terminals I F = 10m A V R = 10V Conditions Symbol Min Typ Max Unit VF IR CT 6 0.45 1 V u A p F f = 1 MHz, and 10 VDC reverse voltage REV:C QW-A1115 Page 1 chip Technology CO., LTD. datasheet pdf - http://..net/ SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBQR0140R) Fig. 1 - Forward characteristics 1000 1m 100u Fig. 2 - Reverse characteristics Reverse current ( A...