CJ2101-G Description
MOSFET CJ2101-G RoHS Device V(BR)DSS -20V RDS(on)MAX 100mΩ @ -4.5V 140mΩ @ -2.5V 210mΩ @ -1.8V ID -1.4A.
CJ2101-G Key Features
- P-Channel MOSFET
- Leading trench technology for low RDS(on)
- Case: SOT-323, molded plastic
- Terminals: Solderable per MIL-STD-750
- Weight: 0.008 grams(approx.)
- 1. GATE
- 2. SOURCE
- 3. DRAIN