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CJM1206-G - P-Channel MOSFET

Key Features

  • - P-Channel -12V(D-S) power MOSFET - Advanced trench MOSFET process technology - Ultra low on-resistance with low gate charge DFNWB2.
  • 2-6L-J 0.082(2.076) 0.076(1.924) Mechanical data - Case: DFNEB2.
  • 2-6L-J, molded plastic. 0.082(2.076) 0.076(1.924) 0.002(0.05) 0.000(0.00) 0.026(0.65)TYP. Circuit diagram - 1. DRAIN - 2. DRAIN - 3. GATE D1 - 4. SOURCE - 5. DRAIN - 6. DRAIN D2 G3 6D 5 D 4S 0.035(0.90) 0.028(0.70) 0.008(0.20) REF. 0.008(0.20) MIN. 4 5 0.013(0.326) 0.007(0.1.

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Datasheet Details

Part number CJM1206-G
Manufacturer Comchip
File Size 115.31 KB
Description P-Channel MOSFET
Datasheet download datasheet CJM1206-G Datasheet

Full PDF Text Transcription for CJM1206-G (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CJM1206-G. For precise diagrams, and layout, please refer to the original PDF.

MOSFET CJM1206-G (P-Channel ) RoHS Device Comchip SMD Diode Specialist V(BR)DSS -12V RDS(on)MAX 45mΩ @ -4.5V 60mΩ @ -2.5V 90mΩ @ -1.8V ID -6A Features - P-Channel -12V(D-...

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@ -4.5V 60mΩ @ -2.5V 90mΩ @ -1.8V ID -6A Features - P-Channel -12V(D-S) power MOSFET - Advanced trench MOSFET process technology - Ultra low on-resistance with low gate charge DFNWB2*2-6L-J 0.082(2.076) 0.076(1.924) Mechanical data - Case: DFNEB2*2-6L-J, molded plastic. 0.082(2.076) 0.076(1.924) 0.002(0.05) 0.000(0.00) 0.026(0.65)TYP. Circuit diagram - 1. DRAIN - 2. DRAIN - 3. GATE D1 - 4. SOURCE - 5. DRAIN - 6. DRAIN D2 G3 6D 5 D 4S 0.035(0.90) 0.028(0.70) 0.008(0.20) REF. 0.008(0.20) MIN. 4 5 0.013(0.326) 0.007(0.174) 6 0.026(0.66) 0.018(0.46) 0.008(0.40) 0.016(0.20) S 3 D 21 0.041(1.05) 0.033(0.85) 0.039(1.00) 0.031(0.

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