D882M-G Description
General Purpose Transistors D882M-G RoHS Device.
D882M-G Key Features
- Power Dissipation
- High collector current
- High current gain
- Low collector-emitter saturation voltage
- 1. BASE
- 2. COLLECTOR
- 3. EMITTER
- 55 to +150 °C
- Part: D882M-G
- Manufacturer: Comchip
- Size: 177.42 KB
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