SB150-G Datasheet | Comchip

Leaded Schottky Barrier Rectifiers SB120-G Thru. SB1100-G Voltage: 20 to 100 V Current: 1.0 A Ro HS Device Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring -High surge current capability -Silicon epitaxial planar chips. -For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications -Lead-free part, meet Ro HS requirements. chip SMD Diode Specialist DO-41 .107(2.7) .080(2.0) 1.0(25.4) Min. .205(5.2) .160(4.1) Mechanical data -Epoxy: UL94-V0 rated flame retardant -Case: Molded plastic body DO-41 -Terminals: Solderable per MIL-STD-750 Method 2026 -Polarity: Color band denotes cathode end -Mounting Position: Any -Weight: 0.34grams .034(0.86) .028(0.70) 1.0(25.4) Min. Dimensions in inches and (millimeter) Electrical Characteristics (at TA=25°C unless otherwise noted) Ratings at Ta=25°C unless otherwise noted. Parameter Symbol SB 120-G SB 140-G SB 145-G Maximum recurrent peak reverse...