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SB320-G - Leaded Schottky Barrier Rectifiers

Key Features

  • -Low drop down voltage. -Metal-Semiconductor junction with guard ring -High surge current capability -Silicon epitaxial planar chips. -For use in low voltage, high efficiency inverters, free wheeling, and polarity protection.

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Datasheet Details

Part number SB320-G
Manufacturer Comchip
File Size 46.56 KB
Description Leaded Schottky Barrier Rectifiers
Datasheet download datasheet SB320-G Datasheet

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Other Datasheets by Comchip

Part Number Description
SB3100-G Leaded Schottky Barrier Rectifiers
SB340-G Leaded Schottky Barrier Rectifiers
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SB360-G Leaded Schottky Barrier Rectifiers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Leaded Schottky Barrier Rectifiers SB320-G Thru. SB3100-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring -High surge current capability -Silicon epitaxial planar chips. -For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications -Lead-free part, meet RoHS requirements. Comchip SMD Diode Specialist DO-201AD 0.210(5.3) 0.189(4.8) 1.0(25.4) Min. 0.375(9.5) 0.287(7.3) Mechanical data -Epoxy: UL94-V0 rated flame retardant -Case: Molded plastic body DO-201AD -Terminals: Solderable per MIL-STD-750 Method 2026 -Polarity: Color band denotes cathode end -Mounting Position: Any -Weight: 1.12grams 0.052(1.30) 0.048(1.20) 1.0(25.4) Min.