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SB350-G - Leaded Schottky Barrier Rectifiers

This page provides the datasheet information for the SB350-G, a member of the SB320-G Leaded Schottky Barrier Rectifiers family.

Datasheet Summary

Features

  • -Low drop down voltage. -Metal-Semiconductor junction with guard ring -High surge current capability -Silicon epitaxial planar chips. -For use in low voltage, high efficiency inverters, free wheeling, and polarity protection.

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Datasheet preview – SB350-G

Datasheet Details

Part number SB350-G
Manufacturer Comchip
File Size 46.56 KB
Description Leaded Schottky Barrier Rectifiers
Datasheet download datasheet SB350-G Datasheet
Additional preview pages of the SB350-G datasheet.

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Other Datasheets by Comchip
  • SB3100-G - Leaded Schottky Barrier Rectifiers
  • SB320-G - Leaded Schottky Barrier Rectifiers
  • SB340-G - Leaded Schottky Barrier Rectifiers
  • SB345-G - Leaded Schottky Barrier Rectifiers
  • SB360-G - Leaded Schottky Barrier Rectifiers
  • SB380-G - Leaded Schottky Barrier Rectifiers

Full PDF Text Transcription

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Leaded Schottky Barrier Rectifiers SB320-G Thru. SB3100-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring -High surge current capability -Silicon epitaxial planar chips. -For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications -Lead-free part, meet RoHS requirements. Comchip SMD Diode Specialist DO-201AD 0.210(5.3) 0.189(4.8) 1.0(25.4) Min. 0.375(9.5) 0.287(7.3) Mechanical data -Epoxy: UL94-V0 rated flame retardant -Case: Molded plastic body DO-201AD -Terminals: Solderable per MIL-STD-750 Method 2026 -Polarity: Color band denotes cathode end -Mounting Position: Any -Weight: 1.12grams 0.052(1.30) 0.048(1.20) 1.0(25.4) Min.
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