Compact CF4N60S
MOSFET
| Part No. | CF4N60S |
|---|---|
| Datasheet | CF4N60S Download |
| Manufacturer | Compact |
| Description | MOSFET |
| Buy | Stock & Price |
DESCRIPTION
● Electronic Ballast● Electronic Transformer
● Switch Mode Power Supply 1-GATE 栅极 2-DRAIN 漏极 3-SOURCE 源极
FEATURES
● Low Thermal Resistance● High Iput Resistance
● Fast Switching
● ROHS Compliant TO-220F
●
MAXIMUM RATINGS
（Tc=25℃) PARAMETER SYMBOL VALUE UNIT Drain-source Voltage VDS 600 V gate-source Voltage VGS ±30 V Continuous Drain Current(TC=25℃) ID 4 A Drain Current-Pulsed IDM 16 A Total Dissipation PD 36 W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55-150 ℃ Single Pulse Avalanche Energy EAS 128 mJ● ELECTRONIC CHARACTERISTICS（Tc=25℃) CHARACTERISTICS SYMBOL TEST CONDITION MIN MAX UNIT Drain-source Breakdown Voltage BVDSS VGS=0V, ID=250μA 600 V Gate Threshold Voltage VGS(TH) VGS=VDS ,ID=250μA 2 4V Drain-source Leakage Current IDSS VDS=600V,VGS=0V 25 uA Drain-Source Diode Forward Voltage VSD Gate-body Leakage Current (VDS = 0) IGSS Forward Transconductance gfs Static Drain-source On Resistance Thermal Resistance Junction-case RDS(ON) RthJ-c VGS=0V，IS=4A VGS=...
