1N5519B datasheet by Compensated Deuices Incorporated.
| Part number | 1N5519B |
|---|---|
| Datasheet | 1N5519B_CompensatedDeuicesIncorporated.pdf |
| File Size | 99.17 KB |
| Manufacturer | Compensated Deuices Incorporated |
| Description | LOW REVERSE LEAKAGE CHARACTERISTICS |
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1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 LOW REVERSE LEAKAGE CHARACTERISTICS LOW NOISE CHARACTERISTICS DOUBLE PLUG CONSTRUCTION METALLURGICALLY BONDED MAXIMUM RATINGS Junction and Storage Temperature: -65°C to +175°C DC Power Dissipation: 500 mW @ +50°C Power Derating:.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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1N5519B | 500mW Zener Diodes | Microsemi |
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1N5519B | SILICON ZENER DIODES | Central Semiconductor |
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1N5519B-1 | Low Noise Zener Diode | VPT |
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1N5519B-1 | 500mW Zener Diodes | Microsemi |
 |
1N5519B-1 | Low Noise Zener Diode | Aeroflex |
View all Compensated Deuices Incorporated datasheets
| Part Number | Description |
|---|---|
| 1N5519B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS |
| 1N5518 | LOW REVERSE LEAKAGE CHARACTERISTICS |
| 1N5518B | LOW REVERSE LEAKAGE CHARACTERISTICS |
| 1N5518B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS |
| 1N5520B | LOW REVERSE LEAKAGE CHARACTERISTICS |
| 1N5520B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS |
| 1N5521B | LOW REVERSE LEAKAGE CHARACTERISTICS |
| 1N5521B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS |
| 1N5522B | LOW REVERSE LEAKAGE CHARACTERISTICS |
| 1N5522B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS |
