| Part number | 1N5537B |
|---|---|
| Datasheet | 1N5537B_CompensatedDeuicesIncorporated.pdf |
| File Size | 99.17 KB |
| Manufacturer | Compensated Deuices Incorporated |
| Description | LOW REVERSE LEAKAGE CHARACTERISTICS |
|
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1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 LOW REVERSE LEAKAGE CHARACTERISTICS LOW NOISE CHARACTERISTICS DOUBLE PLUG CONSTRUCTION METALLURGICALLY BONDED MAXIMUM RATINGS Junction and Storage Temperature: -65°C to +175°C DC Power Dissipation: 500 mW @ +50°C Power Derating:.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
1N5537B | 500mW Zener Diodes | Microsemi |
 |
1N5537B | SILICON ZENER DIODES | Central Semiconductor |
 |
1N5537B-1 | Low Noise Zener Diode | MA-COM |
|
1N5537B-1 | 500mW Zener Diodes | Microsemi |
 |
1N5537B-1 | Low Noise Zener Diode | Aeroflex |
See all Compensated Deuices Incorporated datasheets
| Part Number | Description |
|---|---|
| 1N5537B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS |
| 1N5530B | LOW REVERSE LEAKAGE CHARACTERISTICS |
| 1N5530B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS |
| 1N5531B | LOW REVERSE LEAKAGE CHARACTERISTICS |
| 1N5531B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS |
| 1N5532B | LOW REVERSE LEAKAGE CHARACTERISTICS |
| 1N5532B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS |
| 1N5533B | LOW REVERSE LEAKAGE CHARACTERISTICS |
| 1N5533B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS |
| 1N5534B | LOW REVERSE LEAKAGE CHARACTERISTICS |
