1N6641US
1N6641US is SWITCHING DIODES manufactured by Compensated Deuices Incorporated.
- 1N6639US THRU 1N6641US AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/609
- SWITCHING DIODES
- NON-CAVITY GLASS PACKAGE
- METALLURGICALLY BONDED
1N6639US 1N6640US 1N6641US
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 300 mA Derating: 4.6 mA/°C Above TEC = + 110°C Surge Current: IFSM = 2.5A, Pw = 8.3ms
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
V BRR @ 10 µA V RWM I R1 I R2 @ TA = +25°C @ TA = +150°C VR = VR = V RWM V RWM nA dc 100 100 100 µA dc 100 100 100 T FR IF = 200 mA T RR I R = 10 mA I F = 10 mA RL = 100 Ω ns 4.0 4.0 5.0 CT VR = 0
DIM D F G S
MILLIMETERS MIN MAX 1.78 2.16 0.48 0.71...