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2N2894 Datasheet PDF

Comset Semiconductor 2N2894

The 2N2894 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package. They are intended for high speed, low saturation switching applications up to 100 mA.
Part No. 2N2894
Datasheet 2N2894 Download
Manufacturer
Comset Semiconductor
Description NPN Transistor
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2N2894 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

Symbol VCEO VCBO VCES VEBO IC PD TJ TStg Ratings Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage(VBE = 0) Emitter-Base Voltage (IC = 0) Collector Current @ Tamb = 25° Total Power Dissipation Junction Temperature Storage Temperature range @ Tcase= 25° Value -12 -12 -12 -4 -200 0.36 1.2 1 -65 to +200 -65 to +200 Unit V V V V mA Watts °C °C @ Tcase<100° THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction-ambient Thermal Resistance, Junction-case Value 486 146 Unit °C/ W °C/ W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol ICBO ICES VCEO (*) VCES VCBO VEBO Ratings Collector Cutoff Current Collector Cutoff Current Collector Emitter Breakdown Voltage Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Test Condition(s) VCB =-6 V, IE =0V, Tj =125°C VBE =0 V, VCE =-6 V IC =-10 mA, IB =0 VBE =0 V, IC =-10 µA IC =-10 µA, IE =0 IE =-...
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