ABSOLUTE MAXIMUM RATINGS
Symbol VCEO VCBO VEBO IC PD PD TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Ratings 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 Value -60 -40 -60 -60 -5 -5 -600 0.6 Unit V V V mA Collector Current Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature range @ Tamb = 25° @ Tcase= 25° Watts 3 200 -65 to +200 °C °C THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to ambient in free 2N2905A air 2N2905 2N2905A Thermal Resistance, Junction to case 2N2905 Value 58.3 292 Unit °C/W °C/W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - PNP 2N2905 – 2N2905A ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min -60 -40 -60 -5 75 35 100 50 100 75 100 40 50 30 200 - Typ - Max -10 -20 -10 -20 -50 300 120 -0.4 -1.6 Unit nA µA nA V V V ICBO ICEX VCEO VCBO VEBO hFE VCE(SAT...
Comset Semiconductor
